Purdue University research engineers have developed FeTRAM aka Ferroelectric Transistor Random Access Memory. This new type of memory is way faster than commercially available flash memory and also consumes 99% lesser power. Purdue University engineers combined silicon nanowires with a ferroelectric polymer to develop this new type of memory. The ferroelectric polymer changes polarity when subjected to electric fields which enabled researchers to develop a new type of ferroelectric transistor. Researchers say that the technology is in nascent stage.
FeTRAM | Image Credit: Birck Nanotechnology Center, Purdue University
The FeTRAM technology offers nanovolatile storage. It means FeTRAM is capable of storing data even after turning the computer off. One of the researchers, Saptarshi Das says that our current devices aren’t properly scaled which results into more power consumption. In future, the researchers plan to work on reducing the power dissipation. If the experiments are successful, engineers will be able to develop a new type of memory faster than SRAM. A patent has already been filed for the new technology.
More about FeTRAM on Purdue University Page.
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